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Single Wire CAN-Transceiver Target Data Sheet
Features * * * * * * * * * * * * * Single wire Transceiver Ambient operation range - 40 C to 125 C Supply voltage operation range 5.5 V to 28 V Very low current consumption in sleep mode CAN-Bus, Load and Vbatt pins 4 kV ESD protected Short circuit and overtemperature protected Input bilevel feature for controller wake-up Output bilevel feature for wake up call Loss of Ground protection Bus dominant timeout feature Programmable bus out slewrate Under- and over-voltage-lockout High speed mode up to 100 Kbit/s Ordering Code Q67006-A9352
TLE 6255 G
P-DSO-14
Type
w TLE 6255 G w New type
Package P-DSO-14 (SMD)
Functional Description The TLE 6255 G is a special featured low speed Single-Wire-Bus Transceiver. The device is designed primarily for use in single wire CAN systems operating with various CSMA/CR (carrier sense multiple access/collision resolution) protocols such as the BOSCH Controler Area Network (CAN) version 2.0. The normal communication bit rate is typically 25 Kbit/s. For software or diagnosic data download the bitrate may be increased to 100 Kbit/s. With many integrated features such as slewrate controlled output, loss of ground circuit, bi-level wake-up and sleep mode the TLE 6255 G is optimized for use in most all automotive applications. The device is based on Siemens power technology SPT(R) which allows bipolar and CMOS control circuitry to be integrated with DMOS power devices on the same monolithic circuitry. Additional features like short circuit and overtemperature protection, over- and undervoltage lockout, wide operational temperature and supply voltage ranges and an enhanced power SO-package with high thermal capacity and low thermal resistance will enhance the realibility and robustness of the TLE 6255 G.
Semiconductor Group
1
1998-11-01
TLE 6255 G
Mode Control Two mode control pins (M0: and M1) makes it possible to enter the following modes: 1.) Sleep-Mode (M1 = L; M0 = L): Device in sleepmode with very low current consumption. Wakeup can be done by the mode control pins or if the device recognizes a high voltage wake-up signal on the bus. If there is no modification on the mode inputs the device will return to sleep mode after the wakeup signal is removed from the bus. The transceiver's loss of ground protection circuit connection to ground is not interrupted when in the sleep mode. 2.) High-Speed-Mode (M1 = L; M0 = H): Device in high speed mode for software or diagnosic data download with bitrates up to 100 Kbit/s. The slewrate control feature is deactivated in this mode. 3.) Wakeup-Call Mode (M1 = H; M0 = L): In this mode the TLE 6255 GG will send a high voltage wake-up message waveform on the bus. The bus includes a special node wake up capability which allows normal communication to take place among some nodes while leaving the other nodes in an undisturbed sleep state. This is accomplished by controlling the level of the signal voltages such that all nodes must wake up when they receive a higher voltage message signal waveform. Communication at the lower, normal voltage levels shall not disturb the sleeping nodes (Vbatt > 9 V). 4.) Normal Mode (M1 = H; M0 = H): In this mode the TLE 6255 GG will send a normal voltage message waveform on the bus. Transmission bit rate in normal communication is typically 25 Kbits/sec. In Normal transmission mode the waveform rise times are controlled. Waveform trailing edge control is required to assure that high frequency components are minimized at the beginning of the downward voltage slope. The remaining fall time occurs after the bus is inactive with drivers off and is determined by the RC time constant of the total bus load.
Semiconductor Group
2
1998-11-01
TLE 6255 G
Slew-Rate Control Output voltage and current is controlled by an internal waveshaping circuit; programmable by an external resistor connected from pin RSL to VCC. Transmitter The TLE 6255 GG contains a high current fully short circuit and overtemperature protected highside-driver (pin CANH). To minimise spectral content the CANH-output waveform in normal and wakeup-mode is slewrate controlled. Logic low (TxD = L) on pin TxD will command the output stage to switch to dominant high potential; TxD = H to recessive low on the bus. To avoid a dominant bus, blocked by a faulty TxD input signal, the TLE 6255 GG incorporates a timeout feature. In case of TxD = L for longer than the internal fixed timeout the CANH output is switched to recessive state automatically. The timeout is resetted by a H-signal at TxD without a delay. The loss of an ECU ground may cause the ECU to source current through the various ECU circuits to the communications bus instead of to the vehicle system ground. Therefore the unit-load resistor of any ECU is connected to the LOAD-pin. The TLE 6255 G incorporates a reverse protected switch from LOAD to ground potential. This switch is automatically switched off in a loss of ground state. Receiver In normal, high speed and wakeup-mode all logic data on the bus is sensed by the receive comparator and sent to the microcontroller. In sleep mode no data is transfered. The receive threshold is set to the wakeup level. So a wakeup interrupt is sent only in case of a wakeup call on the bus. An internal fixed filter time avoids false triggering. RxD = H indicates a bus recessive state, RxD = L a bus normal or high voltage dominant state.
Semiconductor Group
3
1998-11-01
TLE 6255 G
Pin Definitions and Functions Pin No. 1, 7, 8, 14 2 Symbol GND TxD Function Ground; internally connected to leadframe Transceive-Input; logic command to transmit on the single wire CAN bus; inverting (L = CANH is dominant); external pull up Mode-Input 0; to program the device operating mode; internal pull down Mode-Input 1; to program the device operating mode; internal pull down Receive-Output; logic data as sensed on the single wire CAN bus; inverting (RxD = L when CANH is dominant); open drain Supply Voltage; input for logic supply voltage Slewrate- Program-Input; an external resistor to VCC on this pin will program the bus output slewrate Battery Supply Voltage; external blocking capacitor necessary (see application circuit) Unit-Load Resistor Ground Input; contains the loss of ground low side switch to GND CAN Bus Input/Output; single wire bus input and output; short circuit protected Not Connected
3 4 5
M0 M1 RxD
6 9 10 11 12 13
VCC
RSL
Vbatt
LOAD CANH N.C.
Semiconductor Group
4
1998-11-01
TLE 6255 G
Pin Configuration (top view)
GND
1
14
GND
TxD
2
Leadframe
13
N.C.
M0
3
12
CANH
M1
4
Chip
11
LOAD
RxD
5
10
Vbatt
VCC
6
9
RSL
GND
7
8
GND
AEP02568
Semiconductor Group
5
1998-11-01
TLE 6255 G
Block Diagram
VBat
10 4 kV ESD Protection and StartupControl Driver
VCC
6 Biasing OVLO UVLO TLE 6255G Voltage Current Converter
9
RSL
4 kV ESD CANH 12
WaveShapeCircuit
Time Out Circuit Mode-Logic M1 M0 Mode Sleep High-Speed Wake-up Call Normal
2
TxD
3
FeedbackLoop Input Filter 11 4 kV ESD 1, 7, 8, 14 GND 13 N.C. Load Driver Loss of Cround Control
M0
L L H H
L H L H
4
M1
LOAD
BUF Receive Comp
5
RxD
AEB02565
Semiconductor Group
6
1998-11-01
TLE 6255 G
Absolute Maximum Ratings
Parameter Symbol Limit Values min. Voltages Supply voltage CAN bus input/output voltage Load voltage Logic supply voltage Logic voltages (VRxD; VTxD; VM0; VM1; VRSL) Currents CAN Bus current Load current ICANH ILOAD - - - - mA mA internally limited internally limited Vbatt VCANH VLOAD VCC Vlogic - 0.3 - 28 - 28 - 0.3 - 0.3 40 28 28 7 7 V V V V V - - - - - max. Unit Remarks
ESD-Protection (Human Body Model; According to MIL STD 833 D) pin CANH, Load, Vbatt other pins Temperatures Junction temperature Junction temperature Junction temperature Storage temperature Thermal Resistances Junction to pin Junction ambient Rthj-pin Rthj-a - - 40 65 K/W K/W junction to pin 1 - Tj Tj Tj Tstg - 40 - - - 50 150 175 200 150 C C C C - t < 1000 h t < 10 h - VESD VESD - 4000 - 2000 4000 2000 V V - -
Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit.
Semiconductor Group
7
1998-11-01
TLE 6255 G
Operating Range Parameter Supply voltage Supply voltage increasing Supply voltage decreasing Output current Logic supply voltage Logic supply voltage; increasing Logic supply voltage; decreasing Junction temperature Symbol Limit Values min. max. V After Vbatt rising above VUV ON Outputs in tristate Outputs in tristate - After VCC rising above VPORON Outputs in tristate Outputs in tristate - Unit Remarks
Vbatt Vbatt Vbatt ICANH VCC VCC VCC Tj
VUVOFF 28
- 0.3 - 0.3 - 0.8
VPOROF
VUV ON V VUV OFF V
150 5.5 mA V
- 0.3 - 0.3 - 40
VPORON V VPOROF V
150 C
Electrical Characteristics 5.5 V < Vbatt < 16 V; 4.75 V < VCC < 5.25 V; - 40 C < Tj < 150 C; M0 = M1 = H; RUL = 10k7 (connected between CANH and LOAD); RRSL = 100 k; all voltages with respect to ground; positive current defined flowing into pin; unless otherwise specified Parameter Symbol Limit Values min. Current Consumption Supply current at Vbatt; sleep mode Supply current at VCC; sleep mode Supply current at Vbatt Supply current at Vbatt Supply current at Vbatt Supply current at Vbatt Supply current at VCC typ. max. Unit Test Condition
Ibatt ICC Ibatt Ibatt Ibatt Ibatt ICC
- - - - - - -
- - 2 1 3 2 2
60 40 6 3 8 4 5
A A
mA mA mA mA mA
M0 = M1 = L; Tj < 125 C M0 = M1 = L; Tj < 125 C TxD = L TxD = H TxD = L; M0 = L TxD = H; M0 = L TxD = H or L; M0 = H or L
Semiconductor Group
8
1998-11-01
TLE 6255 G
Electrical Characteristics (cont'd) 5.5 V < Vbatt < 16 V; 4.75 V < VCC < 5.25 V; - 40 C < Tj < 150 C; M0 = M1 = H; RUL = 10k7 (connected between CANH and LOAD); RRSL = 100 k; all voltages with respect to ground; positive current defined flowing into pin; unless otherwise specified Parameter Symbol Limit Values min. Over- and Under Voltage Lockout UV Switch ON voltage UV Switch OFF voltage UV ON/OFF Hysteresis OV Switch OFF voltage OV Switch ON voltage OV ON/OFF Hysteresis typ. max. Unit Test Condition
VUVON VUVOFF VUVHY VOVOFF VOVON VOVHY
- 4.00 - 30 28 -
6 4.75 1.25 34 32 2
7 5.50 - 38 36 -
V V V V V V
Vbatt increasing Vbatt decreasing VUVON - VUVOFF Vbatt increasing Vbatt decreasing VOVOFF - VOVON
Power ON/OFF Reset at VCC Power ON Reset voltage VPORON Power OFF Reset voltage VPOROF POR ON/OFF Hysteresis VPORHY Transceive Input TxD H-input voltage threshold VTxDH L-input voltage threshold - 0.3 x - - 200 10 10 0.7 x V V mV A ms - - - 0 V < VTxD < 4 V - 4.00 3.50 - 4.25 3.75 0.5 4.50 4.00 - V V V
VCC increasing VCC decreasing VPORON - VPOROF
VCC VTxDL
- 500 20 30
VCC
Hysteresis of input voltage VTxDHY Pull up current Timeout reaction time 50 5 5
ITxD tTOR
Semiconductor Group
9
1998-11-01
TLE 6255 G
Electrical Characteristics (cont'd) 5.5 V < Vbatt < 16 V; 4.75 V < VCC < 5.25 V; - 40 C < Tj < 150 C; M0 = M1 = H; RUL = 10k7 (connected between CANH and LOAD); RRSL = 100 k; all voltages with respect to ground; positive current defined flowing into pin; unless otherwise specified Parameter Symbol Limit Values min. Receive Output RxD Output leakage current Output low voltage level Falltime typ. max. Unit Test Condition
IRxDLK VRxDL tFRxD
- - -
- 0.2 -
10 0.4 200
A V ns
VRxD = 5 V IRxDL = 2 mA
CRxD = 25 pF to GND; RRxD = 2k5
Mode Input M0 and M1 H-input voltage threshold VM0,1H L-input voltage threshold - 0.3 x - - 200 25 0.7 x V V mV A - - - 1 V < VM0,1 < 5 V
VCC VM0,1L
- 500 100
VCC
Hysteresis of input voltage VM0,1HY Pull down current 50 10
IM0,1
Mode Change Delaytimes Normal to high-speed Normal to wakeup call Normal to sleep Sleep to normal Slewrate Input RSL Output voltage
tDNH tDNW tDNS tDSN
- - - -
- - - -
30 30 500 50
s s s s
M1 H to L M0 H to L M0 and M1 H to L M0 and M1 L to H
VRSL
-
3
-
V
IRSL = 20 A
Semiconductor Group
10
1998-11-01
TLE 6255 G
Electrical Characteristics (cont'd) 5.5 V < Vbatt < 16 V; 4.75 V < VCC < 5.25 V; - 40 C < Tj < 150 C; M0 = M1 = H; RUL = 10k7 (connected between CANH and LOAD); RRSL = 100 k; all voltages with respect to ground; positive current defined flowing into pin; unless otherwise specified Parameter Symbol Limit Values min. CANH as Bus Input Wake up offset threshold VIHWUO Wake up fixed threshold Wakeup dead time Wakeup minimal pulse time Receive threshold; in normal, high-speed and wakeup mode Receive hysteresis typ. max. Unit Test Condition
Vbatt - -
4.30 6.15 5 1 1.8 - - - -
Vbatt - V
3.25 8.10 50 10 2.2 V s s V
see Note see Note - - -
VIHWUF tDWU tWUMIN VIH
VRHY Receive propagation time tCRF
Receive propagation time; tCRF high speed Receive propagation time tCRR
50 - - -
100 - - -
200 1 0.5 1
mV s s s
- RxD = H to L; 8 V < Vbatt < 16 V RxD = H to L; M1 = L, 8 V < Vbatt < 16 V RxD = L to H; RRxD = 2k5 8 V < Vbatt < 16 V
Receive propagation time; tCRR high speed Receive blanking time after CANH H to L transition
-
-
0.5
s
RRxD = 2k5 8 V < Vbatt < 16 V
see diagram 2.5
RxD = L to H; M1 = L;
tCRB
1.5
3.0
5.0
s
Semiconductor Group
11
1998-11-01
TLE 6255 G
Electrical Characteristics (cont'd) 5.5 V < Vbatt < 16 V; 4.75 V < VCC < 5.25 V; - 40 C < Tj < 150 C; M0 = M1 = H; RUL = 10k7 (connected between CANH and LOAD); RRSL = 100 k; all voltages with respect to ground; positive current defined flowing into pin; unless otherwise specified Parameter Symbol Limit Values min. CANH as Bus Output Offset wakeup output high VOHWUO voltage Fixed wakeup output high VOHWUF voltage Bus output high voltage; normal and high speed Bus output current limit Bus output leakage current Bus output leakage current (loss of ground) Slew rate rising edge Slew rate rising edge; high speed; M1 = L typ. max. Unit Test Condition
Vbatt - -
1.5 9.8 3.60 - -
Vbatt
V
100 < RUL < 10k7 ,T
xD = L; M0 = L; 8 V < Vbatt < 16 V
Vbatt
4.55
V V
100 < RUL < 10k7
TxD = L; M0 = L
100 < RUL < 10k7
VOH
TxD = L; 8 V < Vbatt < 16 V
IOLI IOLK IOLK
SCANH SCANH
150 - - - - - - - - -
220 - - 0.8 5 5.5 0.5 5.5 0.5 3
300 10 50 - - 7.0 1.0 7.0 1.0 6
mA A A
TxD = L; VCANH = 0 V TxD = H; Tj < 85 C; - 20 V < VCANH< Vbatt 0 V < Vbatt < VUVOFF; - 20 V < VCANH< Vbatt
V/s 30% < VCANH < 70% 100 < RUL < 10k7 V/s 30% < VCANH < 70% 100 < RUL < 10k7 s s s s s TxD = H to L; 8 V < Vbatt < 16 V TxD = H to L; M1 = L; 8 V < Vbatt < 16 V TxD = L to H; 8 V < Vbatt < 16 V TxD = L to H; M1 = L; 8 V < Vbatt < 16 V 8 V < Vbatt < 16 V
Transmit propagation time tTCF Transmit propagation time; high speed
tTCF
Transmit propagation time tTCR Transmit propagation time tTCR high speed Bus output transition time; ttR rising edge
Semiconductor Group
12
1998-11-01
TLE 6255 G
Electrical Characteristics (cont'd) 5.5 V < Vbatt < 16 V; 4.75 V < VCC < 5.25 V; - 40 C < Tj < 150 C; M0 = M1 = H; RUL = 10k7 (connected between CANH and LOAD); RRSL = 100 k; all voltages with respect to ground; positive current defined flowing into pin; unless otherwise specified Parameter Symbol - - - Limit Values min. Bus output transition time; ttR rising edge; high speed Bus output transition time; ttF falling edge Bus output transition time; ttF falling edge; high speed typ. 0.5 3 0.5 max. 1.0 6 1.0 s s s M1 = L; 8 V < Vbatt < 16 V 8 V < Vbatt < 16 V M1 = L; 8 V < Vbatt < 16 V Unit Test Condition
Unit-Load Resistor Ground Input LOAD Output low voltage level Output leakage current (loss of ground) Thermal Shutdown Thermal shutdown junction temperature Thermal switch-on junction temperature Temperature hysteresis
VLOAD ILOADLK
- -
50 -
100 50
mV A
ILOAD= 2 mA; 8 V < Vbatt < 16 V 0 V < Vbat < VUVOFF - 20 V < VLOAD < 20 V
TjSD TjSO
T
150 120 -
175 - 30
200 170 -
C C K
- - -
Note: The device will send a wake up call to the microcontroller at the minimum of VIHWUO or VIHWUF
Semiconductor Group
13
1998-11-01
TLE 6255 G
Diagrams Input/Output-Timing (Pin CANH, TxD and RxD)
VTxD
50%
t t TCF VCANH
80%
t TCR
VIH
t
V
VIH
20%
t t tR VRxD
50%
t CRF
t tF t CRR
t
V with 20% < VCANH < 80% t
Bus Output Slewrate Definition: S CANH =
AET02566
Semiconductor Group
14
1998-11-01
TLE 6255 G
Slewrate SCANH vs. Programming Resistor RRSL (Pin RSL)
S CANH
5.0 V s 2.0 1.0 0.5 0.2 0.1 0 20
AED02570
50
100
200
500
k
1000
R RSL
Wakeup Deadtime tDWU
VCANH VIHWU VIH t VRxD tp t DWU
No Wake Up t p < t DWU
tp t DWU t WUMIN
Controller Wake Up t p < t DWU
t
AET02571
Semiconductor Group
15
1998-11-01
TLE 6255 G
Bus Dominant Blanking Time tTOR
VTxD VIH t VCANH VIH t
H Time Out Counter L Parasitic dominant "L" on TxD
t t TOR
Active Time Out Passive Normal Operation Bus Blocked Bus Available Normal Operation
AET02572
t
Status
Semiconductor Group
16
1998-11-01
TLE 6255 G
RxD Blanking Time tCRB
VTxD
t VCANH VIH
Bus Ringing Bus Ringing
t VRxD
t t CRB
Without Blanking Feature With Blanking Feature
AET02573
Semiconductor Group
17
1998-11-01
TLE 6255 G
Application Circuit
ECU
R WADJ
91 k
Watchdog Adjust
2
8 1 TLE 4278G 14 9
Watchdog Input Watchdog Output Reset Output
Reset-Threshold Adjust (optional) 7 C0 Reset Delay 6 47 nF
C 51 220 nF
DR 1N4001 DZ 36 V
13
VCC C CC 22 F
VCC
3-5, 10-12 GND
C 52 22 F V Bat
10
Controller
VCC
6 9 3 RSL M0 M1 RxD TxD
R TxD 10 k
R RxD 2.5 k
R RSL 100 k
L UL
47 F
Single Wire CAN Bus
CANH
12 TLE 6255G 11 1, 7, 8, 14 GND
C VL 330 pF
R VL 10.7 k Load
4 5 2
VBattery
GND
AES02574
Semiconductor Group
18
1998-11-01
TLE 6255 G
Package Outlines P-DSO-14-4 (Plastic Dual Small Outline)
0.35 x 45
1.75 max 1.45 -0.2
0.19 +0.06
0.2 -0.1
4 -0.2 1)
1.27 0.35 +0.15 2) 14 0.1 0.2 14x 6 0.2 8 0.4 +0.8
1 7 8.75 -0.21) Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Does not include dambar protrusion of 0.05 max. per side
GPS05093
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device
8 max.
Dimensions in mm
Semiconductor Group
19
1998-11-01

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